G-FET™ series

A robust family of products to meet all power range needs

The 650-volt G-FET™, Exagan’s first-generation product, is designed to meet virtually all requirements in IT electronics, automotive and solar applications running on a few amperes to several tens of amperes. G-FET’s unique specifications (breakdown, leakage and low current collapse) are tested on a proprietary hardware and software platform that allows full functional testing under real-world conditions.

650 V product portfolio

Part number RDS(on)
(mΩ)3		 ID25
(A)3		 IDM
(A)3		 COSS
(pF)3		 Package
EXA06C190LDS0 190 10 30 45 PQFN8x8
EXA06C135LDS0 135 25 75 65 PQFN8x8
EXA06C075LDS0 75 30 90 110 PQFN8x8
EXA06C050XDS0 50 40 120 145 TO247-4L

3. 25°C typical values

Product features

Cell G-FET
System designAnalog power
Driving+/- 20V analog

Benefits for power-conversion designers include:

  • Compatibility with standard silicon drivers
    • 10-volt analog signal to control the gate
    • Robust gate with a maximum rating of ± 20 V
    • No gate leakage
    • No negative voltage to force in off-state
  • Gate return pin to reduce the switching inductance loop

Product datasheets with more information are available by completing the request form.