An intelligent and safe power-switching solution
Based upon Exagan’s very robust and cost-competitive GaN transistors, our G-DRIVE™ product enables unprecedented power-switching speeds with very high efficiency. Equipped with digital control, self-protection features and enhanced diagnostics, G-DRIVE has all of the capabilities needed to optimize power-management operations in the most advanced system topologies.
Enter a new era for power electronics and system design with G-DRIVE’s very high power integration and cost-effective BoM (bill of materials).
3. 25°C typical values
|System design||Digital power|
|Driving||3.3V to 5V CMOS|
|Diagnostics||UVLO, OCP, TSD2|
|Self protected||State machine|
|Current sensing||Adjustable, SFB2|
|EMI||Slew rate control|
2. UnderVoltage LockOut, Over Current Protection, Thermal Shut Down, Sense FeedBack
Benefits for power-conversion designers include:
Product datasheets with more information are available by completing the request form.