An intelligent and safe power-switching solution
Based upon Exagan’s very robust and cost-competitive GaN transistors, our G-DRIVE™ product enables unprecedented power-switching speeds with very high efficiency. Equipped with digital control, self-protection features and enhanced diagnostics, G-DRIVE has all of the capabilities needed to optimize power-management operations in the most advanced system topologies.
Enter a new era for power electronics and system design with G-DRIVE’s very high power integration and cost-effective BoM (bill of materials).
Part number | RDS(on) (mΩ)3 |
ID25 (A)3 |
IDM (A)3 |
COSS (pF)3 |
Package |
---|---|---|---|---|---|
EXA06D190MSS0 | 190 | 10 | 30 | 30 | PQFN8x8 |
EXA06D135MSS0 | 135 | 25 | 75 | 50 | PQFN8x8 |
EXA06D075MSS0 | 75 | 30 | 90 | 95 | PQFN8x8 |
3. 25°C typical values
System design | Digital power |
---|---|
Driving | 3.3V to 5V CMOS |
Diagnostics | UVLO, OCP, TSD2 |
Self protected | State machine |
Current sensing | Adjustable, SFB2 |
EMI | Slew rate control |
2. UnderVoltage LockOut, Over Current Protection, Thermal Shut Down, Sense FeedBack
Benefits for power-conversion designers include:
Product datasheets with more information are available by completing the request form.