Grenoble, France – October 18, 2018 – Exagan, a leading innovator of gallium nitride (GaN) semiconductor technology enabling smaller and more efficient electrical converters, has established Exagan Taiwan Ltd. with a new sales and applications center in Taiwan – the company’s first step in its global market deployment – to accelerate the development and use of fast, intelligent GaN power solutions in the region.
The facility in Taipei’s Nankang Software Park officially opened today during ceremonies attended by Exagan’s president and CEO Frédéric Dupont, COO Fabrice Letertre and Asia sales director Ralf Kilguss. Kilguss is heading up regional sales in Asia, leveraging his 20 years of experience in the semiconductor and power electronics markets.
“With this new application center, our company experts will be able to work closely with local customers on evaluating and designing GaN-based solutions while speeding the technology’s adoption in the rapidly growing charger and server sectors, which are being driven by a very dynamic Asian market,” Dupont said.
Since its creation in 2014, Exagan has developed multiple partnerships in Asia to support its product design, development and manufacturing, thus establishing a robust supply chain with proven solutions for the targeted markets.
Earlier this year, Exagan launched its safe, powerful G-FET™ power transistors and G-DRIVE™ intelligent and fast-switching solution featuring an integrated driver and transistor in a single package. These are designed for easy system implementation in applications including servers and USB chargers.
The number of devices with at least one USB type C port for the simultaneous transfer of electrical power, data and video is forecasted to grow to nearly five billion units by 2021, according to market research firm IHS Markit, while total server shipments are expected to expand at a CAGR of 14 percent over the period of 2018 to 2023, as forecasted by Digitimes Research.
Founded in 2014 with support from CEA-Leti and Soitec, Exagan is dedicated to accelerating the power-electronics industry’s transition from silicon-based technology to GaN-on-silicon technology, enabling smaller and more efficient electrical converters. Its GaN power switches are designed for manufacturing in standard 200-mm wafer fabs to provide high-performance, high-reliability products through a robust supply chain. The company’s G-FET and G-DRIVE products offer very high power-switching performance with extremely low conduction losses, enabling unprecedented power integration and efficiency levels in electrical converters for applications including solar, industrial, automotive and IT electronics.
Strategic partners include X-FAB Silicon Foundries and the international research institute CEA-Leti for 200-mm GaN technology and manufacturing and TÜV NORD GROUP for product quality, testing and reliability. Exagan is based in Grenoble and Toulouse, France. For more information, visit www.exagan.com.
President and CEO